Method for forming pattern
AssigneeKabushiki Kaisha Toshiba
InventorsIwao Higashikawa, Suigen Kyoh
Life of this patent
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Abstract
A main pattern region is projected to a substrate to be exposed while a defective portion including a defect generated in the main pattern region of an original mask is masked. Thereafter, a spare pattern corresponding to the defective portion is further projected on the substrate. In this manner, it is possible to prevent the defect of the main pattern region of the original mask from being transferred to the substrate. The pattern accuracy of the repair portion is the same as that of the exposed portion from the original mask. Therefore, the repair can be made with a high accuracy. Furthermore, it is possible to repair the defect produced at a pattern edge portion with a high accuracy without limitations given by a conventional repair technique.
Claims20
A method of forming a pattern comprising:
- preparing a main pattern and spare patterns on at least one original mask before performing a defect inspection of the main pattern;
- performing the defect inspection of the main pattern to determine positions and types of defects;
- selectively forming an opaque film on defective portions including the defects of the main pattern in a main pattern region of the original mask on which an LSI pattern is formed, to prevent the defective portions from being transferred;
- transferring the main pattern region of the original mask to a substrate to be exposed;
- and
- transferring at least one spare pattern selected from the prepared spare patterns to a portion of the substrate corresponding to each of the defective portions covered by the opaque film of the original mask.
A method of forming a pattern, comprising:
- preparing light exposure data of an LSI pattern including a large main pattern and at least one small spare pattern, the at least one small spare pattern being comprised of at least one simple figure pattern;
- forming the large main pattern and the at least one small spare pattern on at least one original mask before performing a defect inspection of the large main pattern;
- performing the defect inspection of the large main pattern to determine positions and types of defects;
- forming an opaque film on a defective portion including a defect selected from the defects of the large main pattern, to prevent the defect selected from being transferred onto the substrate;
- transferring the large main pattern of the at least one original mask onto a predetermined region of the substrate;
- and
- selectively transferring the at least one small spare pattern onto the defective portion of the at least one original mask with the opaque film formed thereon, to recover a desirable figure.
A photomask comprising
- a mask substrate;
- a large main pattern formed on a region of the mask substrate;
- at least one small spare pattern formed on another region of the mask substrate, the at least one small spare pattern being constituted of at least one simple figure pattern;
- and
- an opaque film covering a predetermined region including a defect of the large main pattern.
Dependencies are inferred from the claim text.