Synthesis of tantalum nitride
AssigneeAir Products and Chemicals, Inc.
InventorsYoshihide Senzaki, Arthur Kenneth Hochberg, John Anthony Thomas Norman
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Abstract
A method for producing a tantalum nitride layer on a substrate, comprising; directly injecting a liquid mixture of (R1R2N)3Ta(═NR3) and (R4R5N)3Ta[η2—R6N═C (R7)(R8)] into a dispersing zone followed by delivering the dispersed mixture into a reactor containing the substrate at elevated temperature and reacting the mixture with a source of nitrogen selected from the group consisting of ammonia, alkyl amines, N2H2, alkyl hydrazine, N2 and mixtures thereof, to produce the tantalum nitride layer on the substrate, where R1, R2, R3, R4, R5, R6, R7 and R8 are individually C1-6 alkyl, aryl or hydrogen.
Claims8
A method for producing a tantalum nitride layer on a substrate, comprising;
- directly injecting by liquid flow controller/vaporizer/injector a liquid mixture of (R1R2N)3Ta(═NR3) and (R4R5N)3Ta(η2-R6N═C (R7)(R8)) into a dispersing zone and delivering a resulting dispersed mixture in a reactor containing said substrate at elevated temperature and reacting said mixture with a source of nitrogen added to said mixture in a volumetric ratio of 3:1 to 8:1 of ammonia, to produce said tantalum nitride layer on said substrate, where R1, R2, R3, R4, R5, R6, R7 and R8 are individually aryl, C1-6 alkyl, or hydrogen.
Dependencies are inferred from the claim text.