US 6,319,554 B1 · Method and apparatus for surface metallization

Abstract

The present invention relates generally to a CVD (Chemical Vapor Deposition) process where at least one source metal, such as, nickel (Ni) or alloys thereof, for example, Ni/Cu, Ni/Co, are deposited on metal surfaces which are capable of receiving the source metal, such as, refractory metal, for example, molybdenum, tungsten or alloys thereof, using at least one gaseous Iodide source, such as, an iodic fluid, for example, hydriodic acid gas. The source metal is securely held in place by at least one high strength inert material. The CVD of nickel or alloys thereof, on the surface of refractory metal, such as, molybdenum (Mo) or tungsten (W), where the nickel source is physically isolated from the refractory metal surface to be plated using at least one high strength inert material that is in physical floating contact with the refractory metal surface that needs to be coated with at least one layer of nickel or alloy thereof, and where the nickel source and the high strength inert material are embodied as a single bonded structure.

Claims22

Dependent claims

A process for depositing at least one source metal onto at least one receiving metal, wherein said receiving metal is secured to a substrate, comprising the steps of:

(a) placing said substrate containing said receiving metal in a pressure chamber containing at least one source metal, and wherein at least a portion of at least one inert material is secured to said source metal,
(b) controllably introducing at least one iodic gas into said pressure chamber from a container separate from said pressure chamber, the container containing at least one carrier gas and an iodic fluid selected from the group consisting of hydriodic acid and hydriodic acid forming fluid mixtures,
(c) heating said pressure chamber and its contents in a non-oxidizing environment at a temperature in the range from between about 25° C. to about 1,000° C., for a period of time ranging to a maximum of about 200 minutes.
(d) allowing said pressure chamber and its contents to cool so that said receiving metal has at least one layer of said source metal adhered thereto, and
(e) removing said substrate containing said adhered layer of source metal to said receiving metal, from said pressure chamber.

2 more elements

Dependencies are inferred from the claim text.

Method and apparatus for surface metallization

Life of this patent

Method and apparatus for surface metallization

Life of this patent

Abstract

Claims22