Method for processing semiconductor substrate

A method for processing a semiconductor substrate, comprising the steps of:

• (a) applying an RCA cleaning process to the semiconductor substrate;
• (b) removing a native oxide film formed on a surface of said semiconductor substrate during said RCA cleaning process;
• and
• (c) immersing said semiconductor substrate from which said native oxide film has been removed in pure water at 20 to 100° C. to form an oxide film having a thickness reaching 10 to 15 angstroms on the surface of said semiconductor substrate.

A method for processing a semiconductor substrate, comprising the steps of:

• (a) applying an SPM cleaning process using a mixture of sulfuric acid, hydrogen peroxide solution and pure water as a cleaning solution to the semiconductor substrate;
• and
• (b) applying an APM ozonized-water cleaning process using a mixture of ammonia, hydrogen peroxide solution, pure water and ozonized water as a cleaning solution to said SPM-cleaned semiconductor substrate to form an oxide film on a surface of said semiconductor substrate,
• wherein the concentration of ozone in the entire solution is 1 to 10 ppm.