MOCVD system
AssigneeTokyo Electron Limited
InventorsAkihiko Tsukada, Akihiko Hiroe, Kouji Shimomura
Life of this patent
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Abstract
Disclosed is an MOCVD system for forming a tantalum oxide film on a semiconductor wafer, while using pentoethoxytantalum as a liquid raw material. In the system, a raw material tank is connected to a vaporizing unit through an upstream main line with a flow control unit. The vaporizing unit is connected to the process chamber of a film-forming unit through a downstream main line. A partition wall is arranged to surround the entire system so as to isolate it from the other space in the clean room. The raw material tank, the flow control unit, and part of the upstream main line therebetween are accommodated in a constant temperature and heat insulating box all together and are kept at a temperature of from 25 to 35° C.
Claims20
An MOCVD system for forming a metal oxide film on a target substrate, while using as a liquid raw material a metal organic compound that is in a liquid phase at room temperature:
- an airtight process chamber;
- a support member disposed in the process chamber and configured to support the target substrate;
- an exhaust mechanism configured to exhaust the process chamber and set the process chamber to have a vacuum atmosphere;
- a downstream main line connected to the process chamber and configured to supply a process gas thereto;
- a vaporizing unit connected to the downstream main line outside the process chamber, and configured to heat the liquid raw material to a temperature higher than a vaporizing temperature of the liquid raw material and turn the liquid raw material into the process gas;
- an upstream main line connected to the vaporizing unit and configured to supply the liquid raw material thereto;
- a raw material tank connected to the upstream main line outside the process chamber and configured to store the liquid raw material;
- a flow control unit arranged on the upstream main line between the raw material tank and the vaporizing unit;
- and
- a temperature maintaining mechanism configured to maintain the raw material tank and the flow control unit at a temperature, which is lower than the vaporizing temperature and higher than the room temperature.
An MOCVD system installed inside a clean room, for forming a metal oxide film on a target substrate, while using as a liquid raw material a metal organic compound that is in a liquid phase at room temperature:
- an airtight process chamber;
- a support member disposed in the process chamber and configured to support the target substrate;
- an exhaust mechanism configured to exhaust the process chamber and set the process chamber to have a vacuum atmosphere;
- a downstream main line connected to the process chamber and configured to supply a process gas thereto;
- a vaporizing unit connected to the downstream main line outside the process chamber, and configured to heat the liquid raw material to a temperature higher than a vaporizing temperature of the liquid raw material and turn the liquid raw material into the process gas;
- an upstream main line connected to the vaporizing unit and configured to supply the liquid raw material thereto;
- a raw material tank connected to the upstream main line outside the process chamber and configured to store the liquid raw material;
- a flow control unit arranged on the upstream main line between the raw material tank and the vaporizing unit;
- a partition wall configured to form an isolated space inside the clean room to be isolated from the other space in the clean room, the isolated space enveloping the process chamber, the downstream main line, the vaporizing unit, the upstream main line, the raw material tank, and the flow control unit all together;
- and
- a temperature maintaining mechanism configured to maintain the raw material tank, the flow control unit, and part of the upstream main line therebetween at a temperature, which is lower than the vaporizing temperature and higher than the room temperature, wherein the temperature maintaining mechanism comprises a constant temperature and heat insulating box disposed in the isolated space and accommodating the raw material tank, the flow control unit, and part of the upstream main line therebetween all together.
Dependencies are inferred from the claim text.