A leveling method of a semiconductor device, comprising the steps of:
- placing a semiconductor device substrate on a stage;
- applying a constant current of a first frequency to a probe;
- measuring a capacitance or impedance between the probe and a ground connection in electrical contact with the semiconductor device substrate to globally track an entire surface of the semiconductor device substrate;
- globally leveling the semiconductor device substrate based on the global tracking;
- applying a constant current of a second frequency higher than the first frequency to a probe;
- measuring a capacitance or impedance between the probe and a ground connection in electrical contact with the semiconductor device substrate to locally track the surface of the semiconductor device substrate;
- and
- locally leveling the semiconductor device substrate based on the local tracking.