Integrated circuit inductor with high self-resonance frequency
AssigneeSilicon Wave, Inc.
InventorsJames Douglas Seefeldt, Christopher D. Hull
Life of this patent
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Abstract
An integrated circuit inductor structure that includes a shielding pattern that induces a plurality of small eddy currents to shield the magnetic energy generated by the inductor from the substrate of the IC. The IC inductor structure is formed on a Silicon on Insulator (SOI) substrate where the substrate of the SOI has high resistivity. The shielding pattern forms a checkerboard pattern that includes a plurality of conducting regions completely isolated from each other by oxide material. The inductor has a high quality factor and a high self-resonance frequency due to the effective shielding of electromagnetic energy from the substrate of the IC while not reducing the effective inductance of the inductor.
Claims5
An integrated circuit comprising:
- a) a substrate;
- b) a first dielectric layer contacting the substrate at an interface;
- c) a second dielectric layer contacting the first dielectric layer at an interface, the second dielectric layer including a plurality of conducting regions
- d) a third dielectric layer contacting the second dielectric layer at an interface;
- and
- e) an inductor fabricated above the second dielectric layer,
- f) wherein the plurality of conducting regions induce small eddy currents that do not significantly reduce the inductance of the inductor.
Dependencies are inferred from the claim text.