US 6,310,385 B1 · High band gap layer to isolate wells in high voltage power integrated circuits

Abstract

An integrated circuit is provided in which a relatively low band gap material is used as a semiconductor device layer and in which an underlying high (wide) band gap material is used as an insulating layer. The insulating material has a high thermal conductivity to allow heat dissipation in conjunction with dielectric isolation. The integrated circuit includes one or more semiconductor wells which are each surrounded on their sides by an insulating material. The bottom of the semiconductor wells are disposed atop the high band gap material which provides both electrical isolation and thermal conductivity. A semiconductor substrate may be provided to support the high band gap material. A layer of insulating material may also be provided between the high band gap material and the semiconductor substrate.

Claims16

Dependent claims

An integrated circuit device comprising:

a semiconductor substrate comprising a single layer of semiconductor material;
an insulating layer disposed directly on said semiconductor substrate;
a thermally conducting, semi-insulating layer composed of a material selected from the group consisting of silicon carbide, gallium nitride, amorphous silicon, beryllium oxide, aluminum oxide and low-carrier-lifetime silicon disposed directly on said insulating layer;
and
a low band gap semiconductor device layer disposed directly on said semi-insulating layer;
said semi-insulating layer being comprised of a material having a larger band gap than that of said semiconductor device layer.

3 more elements

Dependencies are inferred from the claim text.

High band gap layer to isolate wells in high voltage power integrated circuits

Life of this patent

High band gap layer to isolate wells in high voltage power integrated circuits

Life of this patent

Abstract

Claims16