Semiconductor device and method for fabricating same
AssigneeSharp Kabushiki Kaisha
InventorMotoji Yagura
Life of this patent
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Abstract
A semiconductor device includes: a semiconductor layered structure including a predetermined mesa portion, formed on a semiconductor substrate; a support member formed so as to bury the mesa portion; and an interconnection layer formed on a top surface of the semiconductor layered structure so as to extend over a top surface of the support member. The interconnection layer is in contact with only a top surface of the mesa portion without being in contact with a bottom surface of the mesa portion. The top surface of the support member has a smoothed profile, and the top surface of the mesa portion and the smoothed top surface of the support member are in substantially the same plane.
Claims11
A semiconductor device comprising:
- a semiconductor layered structure including a predetermined mesa portion comprising a base layer of a transistor, formed on a semiconductor substrate;
- a support member formed so as to bury the mesa portion;
- and
- an interconnection layer formed on at least a portion of a top surface of the semiconductor layered structure so as to extend over at least a portion of a top surface of the support member;
- wherein the interconnection layer is in contact with a top surface of the mesa portion without being in contact with a bottom surface of the mesa portion;
- wherein the top surface of the support member comprises a smoothed profile transitioning from a first height to a second height different from the first height, wherein the first height is substantially the same height as the top surface of the mesa portion;
- and
- wherein the top surface of the base layer of the transistor in the mesa portion and the smoothed top surface of the support member are in substantially the same plane proximate the interface thereof.
Dependencies are inferred from the claim text.