Water cooled support for lamps and rapid thermal processing chamber

A heating assembly for heating a semiconductor substrate in a processing chamber of a reactor, said heating assembly comprising:

• a plurality of heater supports;
• and
• a plurality of heating devices supported by said heater supports, said heater supports providing conductive paths for said heating devices for coupling said heating devices to an external power supply and, further, being adapted to cool said heating devices whereby said heating devices may be operated at a high power output while maintaining the temperature of the heating devices below a maximum temperature.

A heating assembly for heating a semiconductor substrate in a processing chamber of a reactor, said heating assembly comprising:

• a plurality of heater supports;
• and
• a plurality of heating devices supported by said heater supports, each of said heating devices including a pair of electrodes, said heater supports including at least one electrode support, said electrode supports coupling to said electrodes of said heating devices to support said heating devices, said heater supports providing conductive paths for said heating devices for coupling said heating devices to an external power supply and, further, said electrode supports being adapted to cool said heating devices whereby said heating devices may be operated at a high power output while maintaining the temperature of the heating devices below a maximum temperature.

A heating assembly for heating a semiconductor substrate in a processing chamber of a reactor, said heating assembly comprising:

• a plurality of heater supports;
• and
• a plurality of heating devices supported by said heater supports, each of said heating devices including a pair of electrodes, said heater supports including at least one electrode support, said electrode supports coupling to said electrodes of said heating devices to support said heating devices, said heater supports providing conductive paths for said heating devices for coupling said heating devices to an external power supply and, further, being adapted to cool said heating devices whereby said heating devices may be operated at a high power output while maintaining the temperature of the heating devices below a maximum temperature, said electrode supports comprising conductive electrode supports and providing conductive paths for said heating devices for electrically coupling said heating devices to the external power supply, said heater supports comprising conductive tubular members, said tubular members providing conductive paths for said electrode supports and said heating devices for electrically coupling said heating devices to the external power supply.

The heating assembly according to 10, wherein said heating devices comprise infrared heating elements.

A heating assembly for heating a semiconductor substrate, said heating assembly comprising:

• a heating device;
• and
• a heater support contacting and supporting said heating device, said heater support being adapted to couple said heating device to an external power supply and, further, being adapted to cool said heating device whereby said heating device may be operated to produce a high power output while maintaining the temperature of said heating device below a maximum temperature.

A substrate processing apparatus, comprising:

• a heater support;
• and
• a heating device supported by said heater support, said heater support adapted to cool said heating device whereby the temperature of said heating device is allowed to be maintained below a maximum temperature.