Low temperature sacrificial oxide formation
AssigneeInfineon Technologies AG
InventorsAlexander Michaeli, Stephan Kudelka
Life of this patent
Estimating the term…
Abstract
A method for depositing a sacrificial oxide for fabricating a semiconductor device includes preparing p-doped silicon regions on a semiconductor wafer for depositing a sacrificial oxide on the p-doped silicon regions. The method also includes the step of placing the wafer in an electrochemical cell such that a solution including electrolytes interacts with the p-doped silicon regions to form a sacrificial oxide on the p-doped silicon regions when a potential difference is provided between the wafer and the solution. Processing the wafer using the sacrificial oxide layer is also included.
Claims26
A method for depositing a sacrificial oxide for fabricating a semiconductor device comprising the steps of:
- preparing p-doped silicon regions on a semiconductor wafer for depositing a sacrificial silicon oxide on the p-doped silicon regions;
- placing the wafer in an electrochemical cell such that a solution including electrolytes interacts with the p-doped silicon regions to form a sacrificial silicon oxide on the p-doped silicon regions when a potential difference is provided between the wafer and the solution;
- and
- processing the wafer using the sacrificial silicon oxide layer.
A method for electrochemically forming a sacrificial oxide comprising the steps of:
- exposing p-doped portions of a silicon substrate;
- placing the silicon substrate in an electrochemical cell, the electrochemical cell including a solution having electrolytes dissolved therein;
- and
- applying a first potential to the silicon substrate and a second potential to the solution to form a potential difference therebetween such that a sacrificial silicon oxide layer is electrochemically deposited on the exposed p-doped regions of the substrate;
- processing the wafer using the sacrificial silicon oxide layer;
- and
- removing the sacrificial silicon oxide layer.
Dependencies are inferred from the claim text.