Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device, comprising the steps of:

• forming gate electrodes on a semiconductor substrate having a cell region and a peripheral region;
• forming spacers on both sidewalls of said gate electrodes;
• implanting impurity into said semiconductor substrate of said peripheral region;
• forming a growth suppression layer on gate electrodes and surface of said semiconductor substrate in said peripheral region;
• forming doped epitaxial layers over predetermined portions of said semiconductor substrate in said cell region so that said impurity implanted into said semiconductor substrate in said peripheral region is diffused in said semiconductor substrate to form junction regions and impurity existing in said doped epitaxial layers of said cell region is diffused into said semiconductor substrate, wherein said doped epitaxial layers are formed by any one gas of silane and disilane under pressure less than 1 torr and temperature of 600 to 700 degrees Celsius;
• and
• removing said growth suppression layer.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming gate electrodes on a semiconductor substrate having a cell region and a peripheral region;
• forming spacers on sidewalls of said gate electrodes;
• implanting at least one type of impurity into said semiconductor substrate of the peripheral region;
• forming a growth suppression layer on the gate electrodes and the surface of said semiconductor substrate in said peripheral region;
• forming at least one doped epitaxial layer over exposed portions of said semiconductor substrate in said cell region by performing a thermal process using deposition silicon source gas, said thermal process also causing the impurity implanted into said peripheral region to diffuse and thereby form at least one junction region in said peripheral region, said thermal process further causing an impurity existing in said doped epitaxial layer to diffuse into said semiconductor substrate to thereby form at least one junction region in said cell region;
• and
• removing said growth suppression layer.