Integrated formation of LDD and non-LDD semiconductor devices

A method of forming a semiconductor device comprising:

• forming a first gate electrode structure over a substrate, the gate electrode structure including a gate electrode layer over a gate dielectric layer in vertical alignment;
• forming a spacer on at least one sidewall of the first gate electrode structure, the spacer in contact with the gate electrode layer and a portion of the gate dielectric layer;
• forming a second gate electrode structure over the substrate after forming the spacer;
• implanting a first dopant into the substrate to form a first heavily doped active region adjacent to the spacer and spaced from the first gate electrode structure and a second heavily doped active region adjacent to the second gate electrode structure;
• removing the spacer;
• and
• implanting a second dopant into the substrate after removing the spacer to a form a lightly doped active region adjacent to the first gate electrode structure.