Attenuated phase shift mask and a method for making the mask
AssigneeRochester Institute of Technology
InventorBruce W. Smith
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Abstract
The attenuated phase shift mask in accordance with one embodiment of the present invention for use in lithography at or below 0.20 μm and for use at wavelengths below 300 nm includes a substrate with a layer deposited on the substrate. The layer comprises a group IV, V or VI transitional metal nitride and silicon nitride SixNy. The attenuated phase shift mask has a thickness between about 500 angstroms and 2000 angstroms, where the group IV, V or VI transitional metal nitride comprises about ten to forty percent of the layer.
Claims97
An attenuated phase shift mask for use in lithography comprising:
- a substrate;
- and
- a layer comprising a group IV, V or VI transitional metal nitride and silicon nitride SixNy disposed on the substrate.
A method for making an attenuated phase shift mask for use in lithography, the method comprising:
- providing a substrate;
- and
- co-depositing a group IV, V or VI transitional metal nitride and silicon nitride SixNy on the substrate to form a single layer.
A lithography system for producing a pattern on a semiconductor wafer, the lithography system comprising:
- a source of radiation;
- a mask comprising a substrate with a layer disposed on at least a portion of the substrate, wherein the layer comprises a group IV, V or VI transitional metal nitride and silicon nitride SixNy, the source of radiation positioned to direct at least a portion of the radiation at the mask.
An attenuated phase shift mask for use in lithography comprising a layer comprising a group IV, V or VI transitional metal nitride and silicon nitride SixNy.
A method for making an attenuated phase shift mask for use in lithography, the method comprising forming a single layer comprising a group IV, V or VI transitional metal nitride and silicon nitride SixNy.
An attenuated phase shift mask comprising:
- a first layer;
- and
- a second layer disposed at least partially on the first layer, wherein the first layer comprises a group IV, V or VI transitional metal nitride and the second layer comprises silicon nitride SixNy or the first layer comprises silicon nitride SixNy and the second layer comprises a group IV, V or VI transitional metal nitride.
A method for making an attenuated phase shift mask in lithography, the method comprising disposing a second layer at least partially on a first layer, wherein the first layer comprises a group IV, V or VI transitional metal nitride and the second layer comprises silicon nitride SixNy or the first layer comprises silicon nitride SixNy and the second layer comprises a group IV, V or VI transitional metal nitride.
A lithography system for producing a pattern on a semiconductor wafer, the lithography system comprising:
- a substrate;
- a first layer disposed at least partially on the substrate;
- a second layer disposed at least partially on the first layer, wherein the first layer comprises a group IV, V or VI transitional metal nitride and the second layer comprises silicon nitride SixNy or the first layer comprises silicon nitride SixNy and the second layer comprises a group IV, V or VI transitional metal nitride;
- and
- a source of radiation, the radiation directed at least partially at the mask.
Dependencies are inferred from the claim text.