Method for producing a semiconductor material
AssigneeWacker Chemie AG
InventorsHanns Wochner, Theresia Bauer, Josef Dietl, Werner Ott, Herbert Pichler, Wilhelm Schmidbauer, Dieter Seifert, Susanne Weizbauer
Life of this patent
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Abstract
Semiconductor material has a low metal concentration at the surface. The semiconductor material has an iron content and/or chromium content on the surface of less than 6.66×10−11 g/cm2. A method for producing this semiconductor material includes a preliminary cleaning, a main cleaning and hydrophilization. A device for use in this method has a container with pyramid-shaped recesses at the bottom.
Claims7
A method for producing semiconductor material which has a low metal concentration comprising
- washing semiconductor material in a preliminary cleaning in at least one first stage with an oxidizing cleaning solution which contains a mixture of hydrofluoric acid, hydrochloric acid and hydrogen peroxide;
- washing the semiconductor material in a main cleaning in a further stage with an aqueous cleaning solution which contains nitric acid and hydrofluoric acid;
- and,
- during hydrophilization, washing the semiconductor material in a still further stage with an oxidizing cleaning liquid.
The method for producing semiconductor material which has a low metal concentration, as claimed in claimed 1,
- wherein the semiconductor material is silicon.
A method for producing semiconductor material which has a low metal concentration comprising
- washing semiconductor material in a preliminary cleaning in at least one first stage with an oxidizing cleaning solution;
- washing the semiconductor material during a main cleaning with a cleaning solution containing hydrofluoric acid and nitric acid, the content of nitric acid being less than 70% w/w;
- and
- washing the semiconductor material in a further stage with a cleaning solution which contains hydrofluoric acid and nitric acid, the content of nitric acid being greater than 70% w/w;
- and
- during hydrophilization, washing the semiconductor material in a still further stage with an oxidizing cleaning liquid.
Dependencies are inferred from the claim text.