US 6,307,230 B1 · Transistor having an improved sidewall gate structure and method of construction

Abstract

A transistor having an improved sidewall gate structure and method of construction is provided. The improved sidewall gate structure may include a semiconductor substrate (12) having a channel region (20). A gate insulation (36) may be adjacent the channel region (20) of the semiconductor substrate (12). A gate (38) may be formed adjacent the gate insulation (36). A sidewall insulation body (28) may be formed adjacent a portion of the gate (38). The sidewall insulation body (28) is comprised of a silicon oxynitride material. An epitaxial layer (30) may be formed adjacent a portion of the sidewall insulation body (28) and adjacent the semiconductor substrate (12) substantially outward of the channel region (20). A buffer layer (32) may be formed adjacent a portion of the sidewall insulation body (28) and adjacent the epitaxial layer (30).

Claims1

Dependent claims

A transistor comprising:

a semiconductor substrate having a channel region;
a gate insulation adjacent the channel region of the semiconductor substrate;
a gate adjacent the gate insulation;
a sidewall insulation body adjacent a portion of the gate, the sidewall insulation body comprising a silicon oxynitride material;
an epitaxial layer adjacent a portion of the sidewall insulation body and adjacent the semiconductor substrate substantially outward of the channel region;
and
a buffer layer adjacent a portion of the sidewall insulation body and adjacent the epitaxial layer wherein the buffer layer comprises a silicon oxynitride material.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

09/416,380Filed 12 Oct 1999 · division

Priority

5 Jan 1999

Granted

23 Oct 2001

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10D 30/0275
Of lateral single-gate IGFETs: forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised…
H10P 50/283
Of inorganic materials: by chemical means
H10D 64/017
Manufacture or treatment: using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e.…
H10D
Inorganic electric semiconductor devices

Transistor having an improved sidewall gate structure and method of construction

Life of this patent

Transistor having an improved sidewall gate structure and method of construction

Life of this patent

Abstract

Claims1