Semiconductor device with perovskite capacitor and its manufacture method

A semiconductor device comprising:

• an insulated gate field effect transistor having an insulated gate electrode structure formed in a semiconductor substrate and a pair of impurity doped regions formed in said semiconductor substrate on both sides of said insulated gate electrode structure;
• a first insulating film formed over said semiconductor substrate and covering said insulated gate field effect transistor;
• at least one metal plug formed through said first insulating film having an upper surface exposed at an upper surface of the first insulating film and reaching at least one of a pair of impurity doped regions of said insulated gate field effect transistor;
• a second insulating film having an oxygen blocking function and covering said first insulating film;
• a lower electrode formed on said second insulating film;
• a dielectric oxide film having a perovskite crystal structure and formed on said lower electrode;
• an upper electrode formed on said dielectric oxide film to form a capacitor together with said lower electrode and said dielectric oxide film;
• a third insulating film formed over said semiconductor substrate and covering the capacitor;
• and
• a local interconnect extending on said third insulating film and being connected via contact holes formed through said third insulating film between one of said at least one metal plug and said upper or lower electrode.

A semiconductor device comprising:

• an insulated gate field effect transistor having an insulated gate electrode structure formed in a semiconductor substrate and a pair of impurity doped regions formed in said semiconductor substrate on both sides of said insulated gate electrode structure;
• a first insulating film formed over said semiconductor substrate and covering said insulated gate field effect transistor;
• a contact hole formed through said first insulating film, reaching at least one of said pair of impurity doped regions of said insulated gate field effect transistor;
• a metal plug embedded in said contact hole and shaped by etch back or chemical mechanical polishing, the metal plug having an upper surface exposed at an upper surface of said first insulating film;
• a second insulating film having an oxygen blocking function and covering said first insulating film;
• a lower electrode formed on said second insulating film;
• a dielectric oxide film having a perovskite crystal structure and formed on said lower electrode;
• an upper electrode formed on said dielectric oxide film to form a capacitor together with said lower electrode and said dielectric oxide film;
• a third insulating film formed over said semiconductor substrate and covering the capacitor;
• and
• a local interconnect extending on said third insulating film and being connected via contact holes formed through said third insulating film between said metal plug and said upper or lower electrode.

A semiconductor device comprising:

• a semiconductor substrate having a memory cell region and a peripheral circuit region;
• a first insulated gate field effect transistor having a first insulating gate electrode structure and a pair of impurity doped regions formed in said semiconductor substrate on both sides of said first insulated gate electrode structures formed in said memory cell region;
• a second insulated gate field effect transistor having a second insulating gate electrode structure and a pair of impurity doped regions formed in said semiconductor substrate on both sides of said second insulated gate electrode structures formed in said peripheral circuit region;
• a first insulating film formed over said semiconductor substrate and covering said first and second insulated gate field effect transistors;
• at least two metal plugs formed through said first insulating film and reaching at least respective one of the first and second pairs of impurity doped regions of said first and second insulated gate field effect transistors, the metal plugs each having an upper surface exposed at an upper surface of said first insulating film;
• a second insulating film having an oxygen blocking function and covering said first insulating film;
• a lower electrode formed on said second insulating film;
• a dielectric oxide film having a perovskite crystal structure and formed on said lower electrode;
• an upper electrode formed on said dielectric oxide film to form a capacitor together with said lower electrode and said dielectric oxide film;
• a third insulating film formed over said semiconductor substrate and covering the capacitor;
• and
• a local interconnect extending on said third insulating film and being connected via contact holes formed through said third insulating film between one of said metal plugs and said upper or lower electrode.