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US 6,307,221 B1Granted
InxGa1-xP etch stop layer for double recess pseudomorphic high electron mobility transistor structures
AssigneeThe Whitaker Corporation
InventorDavid Danzilio
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Abstract
The invention is a Pseudomorphic transistor structure having a semiconductor layer having a 2DEG layer therein, a Schottky layer, a transition layer and an ohmic contact layer on the transition layer, wherein a double recess structure is disposed through the ohmic layer onto the transition layer in which one or two layers of InyGa1−yP are used as etch-stop layers to define the depth of the recess.
Claims20
A Pseudomorphic HEMT structure, comprising:
- a semiconductor layer having a 2DEG layer therein;
- a layer of silicon atoms;
- a Schottky layer;
- a transition layer and an ohmic contact layer on said transition layer;
- a double recess structure disposed through said ohmic layer and into said transition layer;
- and
- an etch-stop layer of InxGa1−xP defining a bottom surface of said recess.
4 more elements
A Pseudomorphic HEMT structure, comprising:
- a substrate having a buffer layer and a super lattice layer disposed thereon;
- a channel layer disposed on said super lattice layer;
- a spacer layer disposed on said channel layer;
- a Schottky layer disposed on said spacer layer, a transition layer over said Schottky layer, and an ohmic contact layer disposed on said transition layer;
- and a double recess structure through said ohmic layer and into said transition layer, said double recess having a first recess at a first depth d1, said second recess having a bottom surface at a second depth d2, said bottom surface being an etch-stop layer of InxGa1−xP between said Schottky layer and said transition layer.
2 more elements
A Pseudomorphic HEMT structure, comprising:
- a substrate having a buffer layer disposed thereon, a super lattice layer disposed on said buffer layer, a channel layer disposed on said super lattice layer, a spacer layer, a layer of silicon atoms disposed on said spacer layer, a Schottky layer, a transition layer disposed over said Schottky layer, and an ohmic contact layer disposed on said transition layer;
- a double recess disposed through said ohmic layer and said transition layer, said double recess having a first recess at a first depth d1, an etch-stop layer of InxGa1−xP disposed at said first depth d1, and said etch-stop layer having an opening therein;
- and said double recess having a second recess at a second depth d2, said second recess having a bottom surface of a second layer of InxGa1−xP.
Dependencies are inferred from the claim text.