Substrate processing method
AssigneeTokyo Electron Limited
InventorKoji Sakai
Life of this patent
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Abstract
When aging processing is performed, a ratio of water vapor contained in a processing gas is made comparatively large for a certain period of time from start of the processing, whereby it is accelerated for collides of TEOS to be gelled and chained in a network form, so that heating is further uniformly performed for the wafer W. Thereafter, the ratio of water vapor in the processing gas is decreased, so that a water content which is contained in the insulating film material after the aging processing can be reduced in amount.
Claims17
A substrate processing method, comprising the steps of:
- heating a substrate while a processing gas made by mixture of an alkaline gas and water vapor is introduced into a processing chamber in which the substrate is placed;
- and
- decreasing a ratio of water vapor in the processing gas after a lapse of a predetermined period of time from the processing gas is introduced into the processing chamber.
A substrate processing method, comprising the steps of:
- introducing an alkaline processing gas with water into a processing chamber in which a substrate coated with a coating solution in which particles or colloids are dispersed in a solvent is placed;
- and
- decreasing a ratio of water vapor in the processing gas after a lapse of a predetermined period of time from the processing gas is introduced into the processing chamber.
Dependencies are inferred from the claim text.