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US 6,306,759 B1Granted
Method for forming self-aligned contact with liner
AssigneeVanguard International Semiconductor Corporation
InventorsTzu-Shih Yen, Erik S. Jeng, Hsiao-Chin Tuan, Chun-Yao Chen, Eddy Chiang, Wen-Shiang Liao
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Abstract
A method for forming self-aligned contact (SAC) is disclosed to improve device reliability. The method includes forming a dielectric liner over the contact opening before the contact plug is filled in. Optional contact implantation before and after the liner formation can be added to enhance the doping profile of the device.
Claims17
A method for forming a self-aligned contact, comprising:
- providing a semiconductor substrate with at least two conductive structures forming thereon;
- forming a first implantation region of said semiconductor substrate masking by two adjacent said conductive structures;
- depositing a first insulating layer over the semiconductor substrate;
- depositing a second insulating layer over said first insulting layer;
- etching a portion of said second insulating layer to form a preparatory opening between said two adjacent conductive structures in a self-aligned manner;
- forming a second implantation region of said semiconductor substrate through said preparatory opening;
- depositing a third insulting layer conformally over said preparatory opening to form a contact opening;
- forming a third implantation region of said semiconductor substrate through said contact opening;
- and
- filling said contact opening with a conductive plug.
7 more elements
A method for forming a self-aligned contact, comprising:
- providing a semiconductor substrate with at least two conductive structures forming thereon;
- forming a first implantation region of said semiconductor substrate masking by two adjacent said conductive structures;
- depositing a nitride layer over the semiconductor substrate;
- depositing an oxide layer over said nitride layer;
- etching a portion of said oxide layer to form a preparatory opening between said two adjacent conductive structures in a self-aligned manner;
- forming a second implantation region of said semiconductor substrate through said preparatory opening;
- depositing a silicon nitride liner conformally over said preparatory opening to form a contact opening;
- and
- forming a third implantation region of said semiconductor substrate through said contact opening.
6 more elements
A method for forming a self-aligned contact, comprising:
- providing a semiconductor substrate with at least two conductive structures forming thereon, wherein at least one spacer is formed on a lateral side of each said conductive structure;
- depositing an insulating layer over the semiconductor substrate;
- etching a portion of said insulating layer to form an opening between said two adjacent conductive structures in a self-aligned manner;
- depositing a dielectric liner conformally over said opening;
- and
- forming an implantation region in the semiconductor substrate after the dielectric liner formation.
3 more elements
Dependencies are inferred from the claim text.