Backend process for fuse link opening

A method for making a semiconductor device, including a substrate, an insulative layer disposed on the substrate and a metal fuse link disposed on the insulative layer, comprising:

• providing a secondary insulative layer over the metal fuse link;
• providing a primary dielectric layer over the secondary insulative layer;
• chemically-mechanically polishing the primary dielectric layer to a predetermined thickness over the fuse link;
• covering the primary dielectric layer with an etch interrupting layer;
• covering the etch interrupting layer with a secondary dielectric layer, the primary dielectric layer, the etch interrupting layer and the secondary dielectric layer providing an interlayer dielectric having a selected thickness that is greater than the predetermined thickness of the primary dielectric layer;
• forming a metal layer above the interlayer dielectric;
• and
• removing the layers over the etch interrupting layer and above the metal fuse link, and removing the etch interrupting layer and the primary dielectric layer above the fuse link and exposing a portion of the secondary insulative layer disposed above the metal fuse link.

A method for making a semiconductor device, including a substrate, an insulative layer disposed on the substrate and a metal fuse link disposed on the insulative layer, comprising:

• providing a primary dielectric layer over the metal fuse link;
• chemically-mechanically polishing the primary dielectric layer to a predetermined thickness over the fuse link;
• covering the primary dielectric layer with an etch interrupting layer;
• covering the etch interrupting layer with a secondary dielectric layer, the etch interrupting layer and the secondary dielectric layer providing an interlayer dielectric having a selected thickness that is greater than the predetermined thickness of the primary dielectric layer;
• forming a metal layer above the interlayer dielectric;
• and
• removing the layers over the etch interrupting layer and above the metal fuse link, and removing the etch interrupting layer and exposing a portion of the primary dielectric layer disposed above the metal fuse link.