Method for forming a gate electrode on a semiconductor substrate
AssigneeHyundai Electronics Industries Co., Ltd.
InventorByung Hak Lee
Life of this patent
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Abstract
A method for forming a gate electrode on a semiconductor substrate that includes forming a gate insulating layer on a semiconductor substrate, forming a polysilicon layer on the semiconductor substrate, forming a tungsten silicide layer on the polysilicon layer, forming a diffusion barrier layer on the tungsten silicide layer, forming a tungsten layer on the diffusion barrier layer, crystallizing the diffusion barrier layer, forming a first insulating layer on the tungsten layer, forming a gate electrode, forming an oxide layer, and forming a second insulating layer.
Claims41
A method for forming a gate electrode on a semiconductor substrate, the method comprising the steps of:
- forming a gate insulating layer on a semiconductor substrate;
- forming a polysilicon layer on the semiconductor substrate;
- forming a tungsten silicide layer on the polysilicon layer;
- forming a diffusion barrier layer on the tungsten silicide layer;
- forming a tungsten layer on the diffusion barrier layer;
- crystallizing the diffusion barrier layer;
- forming a first insulating layer on the tungsten layer;
- forming a gate electrode;
- forming an oxide layer;
- and
- forming a second insulating layer.
A method for forming a gate electrode on a semiconductor substrate, the method comprising the steps of:
- forming a gate insulating layer on a semiconductor substrate;
- forming a polysilicon layer on the semiconductor substrate;
- forming a tungsten silicide layer on the polysilicon layer;
- forming a diffusion barrier layer on the tungsten silicide layer;
- forming a tungsten layer on the diffusion barrier layer;
- crystallizing the diffusion barrier layer by performing an annealing process in the semiconductor substrate;
- forming a first insulating layer on the tungsten layer;
- forming a gate electrode by selectively patterning the first insulating layer, the tungsten layer, the diffusion barrier layer, the tungsten silicide layer, the polysilicon layer, and the gate insulating layer;
- performing a selective oxidation process in the semiconductor substrate;
- and
- forming a second insulating layer.
Dependencies are inferred from the claim text.