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US 6,306,735 B1Granted
Method for producing a semiconductor wafer
AssigneeWacker Siltronic Gesellschaft fur Halbleitermaterialien AG
InventorReinhard Schauer
Life of this patent
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Abstract
A method for producing a semiconductor wafer includes the deposition of an epitaxial layer onto a substrate wafer in a deposition reactor. The semiconductor wafer, following the deposition of the epitaxial layer, undergoes treatment in an ozone-containing atmosphere.
Claims18
A method for producing a semiconductor wafer comprising
- depositing an epitaxial layer on a substrate semiconductor wafer in a deposition reactor;
- following the depositing of the epitaxial layer, having the semiconductor wafer undergo treatment in an ozone-containing atmosphere;
- transferring the semiconductor wafer into a load lock station in order to undergo the treatment in the ozone-containing atmosphere in said load lock station;
- and
- said load lock station is connected to the deposition reactor.
2 more elements
A method for producing a semiconductor wafer comprising
- depositing an epitaxial layer on a substrate semiconductor wafer in a deposition reactor;
- following the depositing of the epitaxial layer, having the semiconductor wafer undergo treatment in an ozone-containing atmosphere;
- providing a treatment chamber which is connected to the deposition reactor;
- and
- said semiconductor wafer undergoing the treatment in the ozone-containing atmosphere in said treatment chamber.
2 more elements
Dependencies are inferred from the claim text.