Semiconductor article and method of manufacturing the same

A method of manufacturing a semiconductor article comprising the steps of forming a doped layer by an epitaxial growth process, said doped layer containing an element capable of controlling the conductivity type at least on one of the surfaces of a semiconductor substrate, modifying the surface of the doped layer into a porous state to obtain a porous layer thinner than the doped layer, forming a non-porous layer on the porous layer to prepare a first article, bonding said first article and a second article so as to produce a multilayer structure having said non-porous layer in the inside thereof, and separating said multilayer structure along said porous layer.

A method of manufacturing a semiconductor article comprising the steps of forming a doped layer containing an element capable of controlling the conductivity type at least on one of the surfaces of a semiconductor substrate, modifying the surface of the doped layer to form a plurality of porous layers in the doped layer, wherein the plurality of porous layers differ in porosity from each other, and the total thickness of all the porous layers is less than the thickness of the doped layer, forming a non-porous layer on the exposed surface of the porous layer to prepare a first article, bonding said first article and a second article so as to produce a multilayer structure having said non-porous layers in the inside thereof, and separating said multilayer structure along said porous layers.

A method of manufacturing a semiconductor article comprising the steps of forming a doped layer containing an element capable of controlling the conductivity type at least on one of the surfaces of a semiconductor substrate, modifying the surface of the doped layer into a porous state to obtain a porous layer thinner than the doped layer, forming a non-porous layer on the porous layer to prepare a first article, bonding said first article and a second article so as to produce a multilayer structure having said non-porous layer in the inside thereof, and separating said multilayer structure along said porous layer, wherein said porous layer includes first and second porous thin layers having different porosities and laid one on the other to form a multilayer, of which the first porous thin layer located adjacent to said non-porous layer has a lower porosity.

A method of manufacturing a semiconductor article comprising the steps of forming a doped layer, said doped layer comprising an epitaxial layer formed by epitaxial growth and containing an element capable of controlling the conductivity type at least on one of the surfaces of a semiconductor substrate, modifying the surface of the doped layer into a porous state to obtain a porous layer in the epitaxial layer, said porous layer being thinner than the doped layer, forming a non-porous layer on the porous layer to prepare a first article, bonding said first article and a second article so as to produce a multilayer structure having said non-porous layer in the inside thereof, and separating said multilayer structure along said porous layer.

A semiconductor article comprising a semiconductor substrate, a single-crystal semiconductor layer formed on the semiconductor substrate and a porous layer formed on the single-crystal semiconductor layer;

• said single-crystal semiconductor layer being a layer formed by epitaxial growth;
• said porous layer comprising a plurality of layers having respective porosities different from each other.