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US 6,306,725 B1Granted
In-situ liner for isolation trench side walls and method
AssigneeTexas Instruments Incorporated
InventorsSomnath S. Nag, Amitava Chatterjee
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Abstract
An isolation trench (60) comprising a trench (20) formed in a semiconductor layer (12). A barrier layer (22) may be formed along the trench (20). A layer (50) of an insulation material may be formed over the barrier layer (22). A high density layer (55) of the insulation material may be formed in the trench (20) over the layer (50).
Claims5
A method of forming an isolation trench of an integrated circuit, comprising the steps of:
- forming a trench in a semiconductor layer;
- forming a barrier layer along the trench;
- depositing a layer of an insulation material over the barrier layer, wherein the step of depositing the layer of the insulation material comprises the steps of:
- depositing a layer of low density oxide;
- and
- thermally treating the layer to increase a density of the layer;
- and
- after said thermally treating step, depositing a high density layer of the insulation material in the trench over the layer.
5 more elements
Dependencies are inferred from the claim text.