Method of manufacturing an avalanche diode with an adjustable threshold
AssigneeSTMicroelectronics S.r.l.
InventorIsabelle Claverie
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Abstract
The present invention relates to a method of manufacturing an avalanche diode of determined threshold in a substrate of a first conductivity type with a low doping level, including the steps of diffusing in the substrate at least one first region of the first conductivity type; diffusing in the substrate a second region of the second conductivity type protruding from the first region. The opening of a mask of definition of the first region has a lateral extent smaller than the diffusion depth of the first region in the substrate, this lateral extent being chosen all the smaller as the desired avalanche threshold is high.
Claims6
A method of manufacturing an avalanche diode of determined threshold in a substrate of a first conductivity type with a low doping level, including the steps of:
- diffusing in the substrate at least one first region of the first conductivity type;
- diffusing in the substrate a second region of an second conductivity type protruding from the first region;
- wherein an opening of a mask of definition of the first region has a lateral extent smaller than the diffusion depth of the first region in the substrate, this lateral extent being chosen all the smaller as the desired avalanche threshold is high.
A method of simultaneously manufacturing several avalanche diodes of distinct and determined thresholds in a substrate of a first conductivity type of low doping level including the steps of:
- diffusing in the substrate first regions of the first conductivity type;
- diffusing in the substrate second regions of the second conductivity type, each of which protrudes from a first region;
- wherein the openings of the masks of definition of each of the first regions have lateral extents smaller than the diffusion depths of the first regions, the lateral extent being all the smaller as the desired avalanche threshold is high.
Dependencies are inferred from the claim text.