Body driven SOI-MOS field effect transistor and method of forming the same

A method of fabricating a semiconductor device comprising the steps of:

• forming a dummy pattern on a first part of a semiconductor-on-insulator layer (a “SOI layer”);
• providing a first conductivity type high impurity concentration diffusion layer on a second part of the SOI layer other than said first part of the SOI layer covered by said dummy pattern, a lower planar surface of said first conductivity diffusion layer being co-planar with a lower planar surface of said dummy pattern;
• depositing an insulation film which covers said dummy pattern;
• etching an opening in said insulation film over said dummy pattern in order to remove said dummy pattern by etching through said opening and thereby forming a slit;
• and
• providing a semiconductor containing an impurity in said slit.

A method of fabricating a semiconductor device comprising the steps of:

• forming a dummy pattern on a first part of a semiconductor-on-insulator layer (a “SOI layer”);
• providing a first conductivity type high impurity concentration diffusion layer on a second part of the SOI layer other than said first part of the SOI layer covered by said dummy pattern, a lower planar surface of said first conductivity diffusion layer being co-planar with a lower planar surface of said dummy pattern;
• depositing an insulation film which covers said dummy pattern;
• etching an opening in said insulation film over said dummy pattern in order to remove said dummy pattern by etching through said opening and thereby forming a slit;
• and
• providing a metal in said slit.