Anti-fuse for programming redundancy cell, repair circuit having programming apparatus, and fabrication method of anti-fuse

Abstract

An anti-fuse for programming a redundancy cell and a repair circuit having a programming apparatus are disclosed. The circuit includes a half power voltage supplier for supplying a half power voltage, a programming voltage supplier for supplying a programming voltage for exchanging a defective cell of the memory cell array with a redundancy cell, a ground voltage supplier for supplying a ground electric potential in response to an address signal of the memory cell, an anti-fuse for receiving a voltage of the half power voltage supplier and charging the same in the normal operation and breaking a dielectric film in accordance with a voltage difference between the programming voltage supplier and the ground voltage supplier during the programming operation for thereby implementing a programming, and an output unit for outputting an output signal based on the programmed state of the anti-fuse in accordance with a voltage applied from a node commonly connected with the half power voltage supplier, the programming voltage supplier, and the anti-fuse, for thereby enhancing a fabrication yield and reliability of a memory apparatus by easily exchanging a defective cell with a redundancy cell using a threshold voltage of a dielectric film without using an expensive laser apparatus.

Dependencies are inferred from the claim text.