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US 6,306,217 B1Granted
Metal complexes with chelating C-,N-donor ligands for forming metal-containing films
AssigneeMicron Technology, Inc.
InventorsStefan Uhlenbrock, Brian A. Vaartstra
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Abstract
A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Claims34
A chemical vapor deposition system comprising:
- a deposition chamber having a semiconductor substrate or substrate assembly positioned therein;
- a vessel containing a precursor composition comprising one or more complexes of the formula:
- wherein:
- M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals;
- each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R3 and R4 are both methyl and optionally tie R groups are replaced by multiple bonds between backbone atoms in the structure;
- each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide;
- x=1 to 3;
- n=0 to 4;
- and
- y=0 to 4.
7 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a semiconductor substrate or substrate assembly positioned therein;
- a vessel containing a precursor composition comprising one or more organic solvents and one or more complexes of the formula:
- wherein:
- M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals;
- each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R3 and R4 are both methyl and optionally the R groups are replaced by multiple bonds between backbone atoms in the structure;
- each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide;
- x=1 to 3;
- n=0 to 4;
- and
- y=0 to 4.
7 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a substrate positioned therein;
- a vessel containing a precursor composition comprising one or more complexes of the formula:
- wherein:
- M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals;
- each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R3 and R4 are both methyl and optionally the R groups are replaced by multiple bonds between backbone atoms in the structure;
- each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide;
- x=1 to 3;
- n=0 to 4;
- and
- y=0 to 4.
7 more elements
A chemical vapor deposition system comprising;
- a deposition chamber having a substrate positioned therein;
- a vessel containing a precursor composition comprising one or more organic solvents and one or more complexes of the formula:
- wherein:
- M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals;
- each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R3 and R4 are both methyl and optionally the R groups are replaced by multiple bonds between backbone atoms in the structure;
- each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide;
- x=1 to 3;
- n=0 to 4;
- and
- y=0 to 4.
7 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a semiconductor substrate or substrate assembly positioned therein;
- a vessel containing a precursor composition comprising one or more complexes of the formula:
- wherein:
- M is a transition metal selected from the group consisting of IB, IIB, IIIB, IB, IVB, VB, VIB, VIIB, and VIIIB metals;
- and
- each R1 and R2 group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group.
3 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a semiconductor substrate or substrate assembly positioned therein;
- a vessel containing a precursor composition comprising one or more organic solvents and one or more complexes of the formula:
- wherein:
- M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals;
- and
- each R1 and R2 group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group.
3 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a substrate positioned therein;
- a vessel containing a precursor composition comprising one or more complexes of the formula:
- wherein:
- M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals;
- and
- each R1 and R2 group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group.
3 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a substrate positioned therein;
- a vessel containing a precursor composition comprising one or more organic solvents and one or more complexes of the formula:
- wherein:
- M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals;
- and
- each R1 and R2 group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group.
3 more elements
Dependencies are inferred from the claim text.