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AssigneesSony Corporation, Hitachi Kokusai Electric Inc.
InventorsShigeru Fujita, Makoto Furuno, Hideharu Itatani
Estimating the term…
A method of manufacturing a semiconductor device for use with a single wafer type reduced pressure CVD apparatus having a heat processing chamber 1 and a wafer carrier 2 arranged in the heat processing chamber 1 and including a plurality of upper and lower stages, in which wafers W are mounted on respective stages of the wafer carrier 2, and are subjected to film formations process while they are being heated. When wafers W are introduced into the heat processing chamber 1 previously heated to a desired heat processing temperature, wafers W to be mounted on stages except for at least the lowermost stage of the wafer carrier 2 are left in the heat processing chamber 1 until central portions of the wafers W are heated to the vicinity of the temperature within the heat processing chamber 1, without immediately mounting them on the respective stages. Thereafter, the wafers W are mounted on the predetermined stages of the wafer carrier 2 for carrying out the film formation processing.
A method of manufacturing a semiconductor device, said method comprising the steps of:
In a method of manufacturing a semiconductor device for use with a single wafer type low pressure CVD apparatus having a heat processing chamber and a wafer carrier arranged within the heat processing chamber and including a upper and a lower stage, and having a process in which wafers are placed on respective stages of said wafer carrier, and said wafers are heated to be subjected to a film formation processing, said method of manufacturing a semiconductor device comprising the steps of:
Dependencies are inferred from the claim text.