Lithographic printing method using a low surface energy layer
AssigneeMotorola, Inc.
InventorsDavid P. Mancini, Douglas J. Resnick
Life of this patent
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Abstract
A method of contact printing on a device using a partially transparent mask (18) having first and second surfaces, comprises the steps of applying a layer of low surface energy polymeric material (22) to the first surface of the mask; placing the first surface (24) of the mask contiguous to the device (10), the layer of low surface energy polymeric material being substantially in contact with the device; and applying radiation (32) to the second surface of the mask for affecting a pattern in the device.
Claims23
A method of contact printing on a device using a mask that is partially transparent having first and second surfaces, comprising the steps of:
- (a) applying a layer of low surface energy amorphous fluoropolymer material to the first surface of the mask;
- (b) placing the first surface of the mask contiguous to the device, the layer of low surface energy amorphous fluoropolymer material being in contact with the device;
- and
- (c) applying radiation to the second surface of the mask for affecting a pattern in the device.
A method of creating patterns in a material having a surface, comprising the steps of:
- (a) applying a layer of low surface energy amorphous fluoropolymer material to the surface of a mask;
- (b) applying resist to the surface of the material;
- (c) placing the surface of the mask in contact with the resist;
- (d) applying radiation to the mask so a pattern is created in the resist;
- (e) removing a portion of the resist;
- and
- (f) modifying the surface of the material where the resist was removed.
A method of manufacturing an integrated circuit device, comprising the steps of:
- (a) forming a semiconductor layer having a surface;
- (b) applying a low surface energy amorphous fluoropolymer material to a surface of a mask;
- (c) applying resist to the surface of the semiconductor layer;
- (d) placing the low surface energy amorphous fluoropolymer material in contact with the resist;
- (e) applying radiation to the mask for creating a pattern in the resist;
- (f) removing a portion of the resist;
- and
- (g) modifying the surface of the semiconductor layer where the resist was removed.
A method of printing on a device using a mask that is partially transparent having first and second surfaces, comprising the steps of:
- (a) applying a layer of low surface energy amorphous fluoropolymer material to the first surface of the mask;
- (b) placing the first surface of the mask at a predetermined distance from the device;
- and
- (c) applying radiation to the second surface of the mask for affecting a pattern in the device.
Dependencies are inferred from the claim text.