US 6,297,994 B1 · Single electron MOSFET memory device and method

Abstract

A memory device and related methods are described. The memory device includes a plurality of cells, each cell including a MOSFET having a source coupled to a first end of a channel, a drain coupled to a second end of the channel, a gate formed on a gate insulator and extending from the source to the drain and a plurality of conductive islands, each surrounded by an insulator, formed in the channel. The islands have a maximum dimension of three nanometers. The surrounding insulator has a thickness of between five and twenty nanometers. Each island and surrounding insulator is formed in a pore extending into the channel. As a result, the memory cells are able to provide consistent, externally observable changes in response to the presence or absence of a single electron on the island.

Claims10

Dependent claims

A method of operating a selected memory cell comprising:

applying a positive voltage to a gate of a MOSFET comprising the selected memory cell to form a channel;
storing data represented by presence or absence of one or more electrons in an island formed from conductive material in an anodically-defined pore in the channel, the island insulated from the channel;
accessing the selected memory cell at a time after the act of storing data;
sampling an electrical parameter manifested by the selected memory cell in response to a stimulus;
and
determining when one or more electrons are stored in the island in the selected memory cell from the sample of the electrical parameter.

3 more elements

A method of operating a selected memory cell comprising:

applying a positive voltage to a gate of a MOSFET comprising the selected memory cell to form a channel;
storing data represented by a predetermined number of electrons in an island formed from conductive material in an anodically-defined pore in semiconductor material forming the channel within the MOSFET, the island insulated from the channel, the predetermined number of electrons corresponding to one of a plurality of entries that may be stored in the MOSFET;
accessing the selected memory cell at a time after the act of storing data;
sampling an electrical parameter manifested by the selected memory cell in response to a stimulus;
and
determining which of the plurality of entries is stored in the selected memory cell from the sample of the electrical parameter.

3 more elements

Dependencies are inferred from the claim text.

Single electron MOSFET memory device and method

Life of this patent

Single electron MOSFET memory device and method

Life of this patent

Abstract

Claims10