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US 6,297,556 B1Granted
Electrically resistive structure
AssigneeU.S. Philips Corporation
InventorsAnton Heger, Edward W. A. Young
Life of this patent
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AssigneeU.S. Philips Corporation
InventorsAnton Heger, Edward W. A. Young
Estimating the term…
An electrically resistive structure comprising a substrate (11) which is provided on at least one side with a first resistive film (13) and a second resistive film (17), the materials of these first and second films (13, 17) being mutually different, whereby an anti-diffusion film (15) is disposed between the first and second films (13, 17). The presence of such an anti-diffusion film (15) allows annealing of the resistive structure without significant degradation of its resistive properties. Suitable alloy materials for use in such an anti-diffusion film (15) include WTi, and particularly WTiN. Appropriate exemplary materials for the first resistive film (13) and second resistive film (17) include SiCr and CuNi alloys, respectively.
An integrated resistor comprising a substrate which is provided on at least one side with a first and a second film of resistive material, said first film comprising a SiCr alloy and said second film comprising a CuNi alloy and an electrically conductive anti-diffusion film comprising a WTiN alloy disposed between said first and second films of resistive material.
An integrated resistor comprising a substrate which is provided on at least one side with a first and a second film of resistive material, said first film comprising a SiCr alloy and said second film comprising CuNi alloy and an electrically conductive anti-diffusion film comprising a WTi alloy disposed between said first and second films of resistive material.
An integrated resistor comprising a substrate which is provided on at least one side with a first and a second film of resistive material, said first film comprising a siCr alloy and said second film comprising a CuNi alloy and an anti-diffusion film of as material having a TCR not greater than in the order of 50 ppm/K disposed between said first and second films of resistive material.
Dependencies are inferred from the claim text.