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AssigneeHitachi, Ltd.
InventorsAtsushi Nakamura, Mitsuaki Katagiri, Kunihiro Tsubosaki, Asao Nishimura, Masachika Masuda
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A semiconductor device having power supply leads and signal leads on the main surface of a semiconductor chip. Since floating capacitance applied to the power supply leads can be made large and floating capacitance applied to the signal leads can be made small by making the interval between the signal leads and the semiconductor chip larger than the interval between the power supply leads and the semiconductor chip, the prevention of fluctuations in power source potential and the acceleration of the signal propagation speed can be carried out at the same time. As a result, the electric characteristics of the semiconductor device can be improved.
A semiconductor device having power supply leads and signal leads on the main surface of a semiconductor chip, wherein
A semiconductor device having power supply leads and signal leads on the main surface of a semiconductor chip, wherein
A semiconductor device having power supply leads and signal leads on the main surface of a semiconductor chip, wherein
A semiconductor device having power supply leads and signal leads whose end portions are located on the semiconductor chip side on the main surface of a semiconductor chip, wherein
A semiconductor device having power supply leads and signal leads whose end portions are located on the semiconductor chip side on the main surface of a semiconductor chip, wherein
A semiconductor device having power supply leads and signal leads whose end portions are located on the semiconductor chip side on the main surface of a semiconductor chip, wherein
A method of manufacturing a semiconductor device having power supply leads and signal leads on the main surface of a semiconductor chip, comprising sealing the semiconductor chip, the inner portions of the power supply leads and the inner portions of the signal leads by a resin while the interval between the signal leads and the semiconductor chip is made larger than the interval between the power supply leads and the semiconductor chip, so as to form a resin sealer.
A method of manufacturing a semiconductor device having power supply leads and signal leads on the main surface of a semiconductor chip, comprising sealing the semiconductor chip, the inner portions of the power supply leads and the inner portions of the signal leads by a resin while the interval between the signal leads and the semiconductor chip is made larger than the interval between the power supply leads and the semiconductor chip, the signal leads are separated from the semiconductor chip, and the power supply leads are fixed to the semiconductor chip, so as to form a resin sealer.
A method of manufacturing a semiconductor device having power supply leads and signal leads on the main surface of a semiconductor chip, comprising sealing the semiconductor chip, the inner portions of the power supply leads and the inner portions of the signal leads by a resin while the interval between the signal leads and the semiconductor chip is made larger than the interval between the power supply leads and the semiconductor chip, the signal leads are separated from the semiconductor chip, and the power supply leads are fixed to the semiconductor chip directly or through an adhesive layer, so as to form a resin sealer.
A semiconductor device having power supply leads and signal leads on the main surface of a semiconductor chip, wherein
A semiconductor device comprising;
Dependencies are inferred from the claim text.