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US 6,297,133 B1Granted
Method of fabricating well
AssigneeUnited Microelectronics Corp.
InventorsJacob Chen, Tz-Guei Jung
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Abstract
A method of manufacturing wells comprises the step of providing a p-type substrate and then sequentially forming a p-well and n-well with low dosage in the p-type substrate. Thereafter, energy is used to dope n-type ions into the p-well. The triple well formed in the present invention has low dosage ions, hence the DRAM formed on the triple well in subsequent process can have a faster refresh time.
Claims14
A method of fabricating wells, comprising:
- providing a substrate having a first conductivity type;
- forming a first well having a second conductivity type in part of the substrate;
- forming a second well having the first conductivity type in another part of the substrate;
- and
- forming a third well having the second conductivity type in the bottom of the second well, wherein the second well is a triple well.
2 more elements
A method of fabricating wells, comprising:
- providing a substrate having a first conductivity type implanted with a first ion implantation dosage;
- forming a first well having a second conductivity type implanted with a second ion implantation dosage in part of the substrate;
- forming a second well having the first conductivity type implanted with the second ion implantation dosage in another part of the substrate;
- and
- forming a third well having the second conductivity type implanted with a third ion implantation dosage in the bottom of the second well, wherein the second well is a triple well.
2 more elements
Dependencies are inferred from the claim text.