Semiconductor device manufacturing method for grinding and dicing a wafer from a back side of the wafer

Abstract

A yield rate and a throughput of a semiconductor device can be increased when a large-diameter wafer having a reduced thickness is used. The semiconductor device is produced by using a wafer having a front surface on which circuits are formed and a back surface opposite to the front surface. A protective tape is applied to the front surface of the wafer. The wafer is mounted to a dicing tape via the protective tape, the dicing tape being spread on a wafer frame having a size larger than a diameter of the wafer. The back surface of the wafer is ground while the wafer is mounted on the dicing tape. The wafer is diced, after the wafer is ground, while the wafer is mounted on the dicing tape so as to form the semiconductor device by full-dicing.

Dependencies are inferred from the claim text.