Method of manufacturing a semiconductor device
AssigneeSeiko Instruments Inc.
InventorSumio Koiwa
Life of this patent
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Abstract
To provide a method of manufacturing a semiconductor device in which an epitaxial growth film is formed on a semiconductor substrate having a buried layer, which is capable of reducing the manufacturing time of the semiconductor device or reducing the IC chip area. The method of manufacturing a semiconductor device is characterized by including a process of selecting the concentration of the p-type conductive impurities which put the surface of the silicon semiconductor substrate into a full amorphous state and conducting doping with the impurities.
Claims30
A method of manufacturing a semiconductor device comprising the steps of:
- doping all or a region of a semiconductor substrate with p-type conductivity impurities so that the doped portion of the semiconductor substrate becomes fully amorphous;
- annealing the doped semiconductor substrate to repair the crystalline structure of the doped portion so that it becomes monocrystalline;
- forming an epitaxial growth film on the annealed semiconductor substrate;
- doping the epitaxial growth film with impurities;
- and annealing the semiconductor substrate having the epitaxial growth film doped with the impurities.
A method of manufacturing a semiconductor device comprising the steps of:
- doping all or a region of a semiconductor substrate with inert element atoms;
- doping at least a part of the region of the substrate which has been doped with the inert element atoms with p-type conductivity impurities so that the doped portion of the semiconductor substrate becomes fully amorphous;
- annealing the doped semiconductor substrate to repair the crystalline structure of the doped portion so that it becomes monocrystalline;
- forming an epitaxial growth film on the annealed semiconductor substrate;
- doping the epitaxial growth film with impurities:
- and annealing the semiconductor substrate having the epitaxial growth film doped with the impurities.
A method of manufacturing a semiconductor device comprising the steps of:
- doping all or a region of a semiconductor substrate with p-type conductivity impurities;
- forming an epitaxial growth film on the doped semiconductor substrate without annealing the doped semiconductor substrate after doping of the p-type conductivity impurities therein;
- doping the epitaxial growth film with impurities;
- and annealing the semiconductor substrate having the epitaxial growth film doped with the impurities.
Dependencies are inferred from the claim text.