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US 6,297,107 B1Granted
High dielectric constant materials as gate dielectrics
AssigneeAdvanced Micro Devices, Inc.
InventorsEric Paton, Matthew S. Byunoski, Paul R. Besser, Paul L. King, Qi Xiang
Life of this patent
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Abstract
A semiconductor structure having a gate dielectric between a gate electrode and a semiconductor substrate is formed with a high dielectric metal oxide layer by replacing a sacrificial gate oxide. Embodiments include forming the metal oxide layer by applying a chemical solution deposition of a metalorganic on to an exposed surface of the substrate followed by pyrolizing the metalorganic residue to a metal oxide.
Claims13
A method of forming a composite structure, which method comprises:
- forming a sacrificial gate oxide layer on a surface of a semiconductor substrate;
- forming a sacrificial gate electrode on the sacrificial gate oxide layer;
- depositing an insulating layer over the substrate and adjacent to the sacrificial gate electrode;
- removing the sacrificial gate electrode;
- removing the sacrificial gate oxide layer to expose the surface of the substrate;
- applying a metalorganic compound on the surface of the substrate;
- and
- forming a metal oxide layer on the surface of the substrate from the applied metatorganic compound.
5 more elements
A method of forming a semiconductor device, the method comprising:
- forming a sacrificial gate oxide layer on a semiconductor substrate;
- forming a first gate electrode on the sacrificial gate oxide layer;
- depositing an insulating on the substrate and adjacent to the first gate electrode;
- removing the first gate electrode;
- removing the sacrificial gate oxide layer to expose the substrate thereunder;
- forming a metal oxide layer on the exposed surface of the semiconductor substrate by depositing a metalorganic solution and pyrolizing the metalorganic solution;
- and
- forming a second gate electrode on the metal oxide layer.
5 more elements
Dependencies are inferred from the claim text.