Method for manufacturing ferroelectric capacitor and method for manufacturing ferroelectric memory

A method for manufacturing a ferroelectric capacitor comprising a first electrode made of iridium, a lead zirconate titanate ferroelectric film on the first electrode, and a second electrode made of iridium on the ferroelectric film;

• the manufacturing method having the following steps:
• a) depositing titanium, a constitutive metal element of the ferroelectric film, on the first electrode to form a titanium film;
• b) depositing an oxide of lead, a constitutive metal element of the ferroelectric film, on the titanium film;
• c) forming a lead titanate film including of the deposited lead oxide and titanium of the titanium film on the first electrode;
• d) depositing a constitutive material of the lead zirconate titanate ferroelectric film on the formed lead titanate film used as the crystal nucleus to form the ferroelectric film;
• and
• e) forming the second electrode on the ferroelectric film;
• wherein after the titanium film is deposited using the sputtering method, chemical vapor deposition method, or vacuum deposition method, the lead oxide is deposited using the sputtering method at a substrate temperature higher than the crystallization temperature of the lead titanate film;
• then with the constitutive material of the lead zirconate titanate ferroelectric film being deposited using the sputtering method at a substrate temperature higher than the perovskite crystal growth temperature;
• and afterwards with, a heat treatment of the deposited film being performed.