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AssigneeNikon Corporation
InventorsTimothy R. Groves, Steven D. Golladay, Hans C. Pfeiffer
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A method for improving image fidelity on a resist. The method adjusts the intensity distribution of the electron beam such that the feature size at the edges and the center of a subfield have a same width “w”. This is accomplished by intentionally increasing the incident intensity where the images are small (more pronounced blurring), and intentionally decreasing the incident intensity where the images are large (less pronounced blurring). This can be achieved, for example, by maintaining a cathode temperature profile which increases or decreases radially by an appropriate amount.
A method of improving image fidelity on a surface of a wafer comprising the step of adjusting an intensity distribution of an electron beam focused on a subfield of the wafer such that the intensity distribution of the electron beam is non uniform between portions of the subfield.
A method of adjusting a feature size on a subfield of a wafer comprising the step of adjusting a temperature of a charged particle emitting device emitting an electron beam focused on the subfield such that the intensity distribution of the electron beam is non uniform between portions of the subfield.
A method of fabricating an electronic device including
Dependencies are inferred from the claim text.