Utilize ultrasonic energy to reduce the initial contact forces in known-good-die or permanent contact systems

A method of simultaneously forming bonds between a semiconductor die having at least one bond pad on a first surface thereof and an interconnect having at least one contact member on a connection surface thereof, said at least one contact member configured to penetrate a layer of hard material on an outer surface of said at least one bond pad, thereby connecting said at least one contact member to said at least one bond pad of said semiconductor die, said method comprising:

• aligning said semiconductor die and said interconnect;
• bringing together the first surface of the semiconductor die and the connection surface of the interconnect having said at least one contact member aligned proximate said at least one bond pad on said first surface of said semiconductor die;
• engaging said semiconductor die and said interconnect using an increasing force;
• and
• substantially ultrasonically vibrating one of said semiconductor die and said interconnect using vibrational energy having said at least one contact member of said nterconnect penetrating a portion of said at least one bond pad of said semiconductor die forming an electrical connection.