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AssigneeSamsung Electronics Co., Ltd.
InventorsViktor Anatolievich Iovdalsky, Eduard Volfovich Aizenberg, Vladimir Iliich Beil, Mikhail Ivanovich Lopin
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In a microwave hybrid integrated circuit a metallized recess (8) is formed on the back or face side of a board (1) of the metallization of which recess serves as a bottom plate (6) of a capacitor (5), a remaining portion (9) of the board (1) under the recess (8) serves as the dielectric of the capacitor (5), and a top plate (7) thereof is situated on the face side of the board (1) and makes part of a topological metallization pattern (2), the remaining portion of the thickness of the board (1) in the recess (8) being of 1 to 400 μm.
A microwave hybrid integrated circuit, comprising a dielectric board (1) provided with a topological metallization pattern (2) on the face side thereof and with a shield grounding metallization (3) on its back side, said metallization being electrically connected to a metal base (4), a capacitor (5) electrically connected by its first plate (6) to the base (4), and by its second plate (7) to the topological metallization pattern (2), CHARACTERIZED in that a metallized recess (8) is formed on the face side of the board (1), the metallization of which recess serves as the first plate (6) of the capacitor (5), a remaining portion (9) of the board (1) above or below the recess (8) serves as the dielectric of the capacitor (5), while the second plate (7) thereof is located on the face side of the board (1) and makes a part of the topological metallization pattern (2), the remaining board thickness in the recess (8) being equal to 1-400 μm.
Dependencies are inferred from the claim text.