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US 6,294,802 B1Granted
Field effect transistor and method of manufacturing the same
AssigneeNEC Corporation
InventorKousei Unozawa
Life of this patent
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Abstract
A field effect transistor has an InGaAs channel layer and an InGaP electron donor layer on a GaAs substrate. A natural superlattice is formed in the crystal of the InGaP electron donor layer, and a gate finger is formed to run in the [−110] direction. A method of manufacturing this field effect transistor is also disclosed.
Claims3
A field effect transistor having an InGaAs channel layer and an InGaP electron donor layer on a GaAs substrate, wherein
- a natural superlattice is formed in a crystal of said InGaP electron donor layer, and a gate finger is formed to run in a [−110] direction.
Dependencies are inferred from the claim text.