Infrared sensor
AssigneeMurata Manufacturing Co., Ltd.
InventorKooji Hayashi
Life of this patent
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Abstract
An infrared sensor has a stem with a metallic base serving as a ground and a ground terminal extending from the metallic base; a substrate disposed on the metallic base; a field effect transistor attached to the substrate; a pyroelectric element connected between the gate of the field effect transistor and ground; and a capacitor connected between ground and either the drain terminal or the source terminal of the field effect transistor. One of the electrodes of the capacitor is directly connected to the metallic base of the stem, while the other electrode of the capacitor is directly connected to the corresponding terminal by a conductive bonding material.
Claims17
An infrared sensor, comprising:
- a metallic base serving as a ground and a ground terminal extending from said metallic base;
- a substrate disposed on said metallic base;
- a field effect transistor having gate, drain and source terminals, said field effect transistor being attached to said substrate;
- a pyroelectric element electrically connected between said gate terminal and said ground;
- and
- a capacitor having first and second electrodes, said capacitor being disposed on said metallic base, said first electrode being directly electrically and physically connected to said metallic base, said second electrode being directly electrically and physically connected to one of said source and drain terminals.
Dependencies are inferred from the claim text.