Method of forming TEOS oxide films
AssigneeOki Electric Industry Co., Ltd.
InventorNobuhiro Terada
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Abstract
With a construction wherein an interlayer insulating film of a semiconductor device is comprised of a TEOS oxide film formed by means of the plasma CVD method as an underlayer of the interlayer insulating film, and a TEOS oxide film formed by means of the CVD method as an upper layer of the same, laminated to the former, the thickness of the upper layer film is increased by changing an output in low frequency bands of RF, or changing a ratio of a TEOS gas flow rate to an O2 flow rate in applying the plasma CVD method to form the underlayer film.
Claims14
A method of forming an insulating film of a semiconductor device by laminating a first oxide film formed from an O2 gas and a TEOS gas as an underlayer of the insulating film by a plasma CVD method, to a second oxide film formed from an O3 gas and a TEOS gas as an upper layer by the same plasma CVD method, the method comprising adjusting a thickness of the second oxide film by changing a static charge within the first oxide film.
A method of fabricating a semiconductor device, comprising:
- providing a semiconductor substrate having a surface;
- forming a conductive pattern on the surface of the semiconductor substrate;
- forming a first oxide film so as to cover the conductive pattern and the surface of the semiconductor substrate, using oxygen and tetraethylorthosilicate, wherein the first oxide film contains an electric charge larger than 2×1011 q/cm2, and wherein q denotes a charge on an electron;
- and
- forming a second oxide film on the first oxide film, using ozone and tetraethylorthosilicate.
A method of fabricating a semiconductor device, comprising:
- providing a semiconductor substrate;
- forming a first oxide film on the semiconductor substrate, using oxygen and tetraethylorthosilicate, wherein the first oxide film contains an electric charge larger than 2×1011 q/cm2, and wherein q denotes a charge on an electron;
- and
- forming a second oxide film on the first oxide film, using ozone and tetraethylorthosilicate.
Dependencies are inferred from the claim text.