Method of polishing substrates comprising silicon dioxide and composition relating thereto
AssigneeRodel Holdings, Inc.
InventorMichael R. Oliver
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Abstract
A method of manufacturing semiconductor devices or precursors to semiconductor devices by hydrophobically modifying a device layer to thereby decrease the rate of polishing of the layer by at least 15%. The hydrophobically modified layer can be used as a stop layer to thereby allow for improved planarization of at least one layer of the device.
Claims6
A method for manufacturing a semiconductor device or semiconductor device precursor, said method comprising the step of hydrophobically modifying a substrate surface of the semiconductor device or the semiconductor device precursor, said substrate comprising silicon dioxide, whereby the hydrophobic modification of said substrate reduces the polishing rate of said substrate by more than 15% relative to the polishing rate of said substrate before hydrophobic modification and whereby said substrate is hydrophobically modified by chemically bonding hydrocarbon radicals to at least a portion of the silicon dioxide or by dehydrogenating at least a portion of the silicon dioxide.
Dependencies are inferred from the claim text.