Dual slurry particle sizes for reducing microscratching of wafers

A method, comprising:

• providing at least one wafer for polishing;
• polishing a processing surface of the at least one wafer using a first polishing process that is associated with a slurry having a first abrasive particle size;
• polishing the processing surface of the at least one wafer using a second polishing process that is associated with a slurry having a second abrasive particle size, the second abrasive particle size being less than the first abrasive particle size;
• filtering the slurry during the first polishing process through a first filter;
• filtering the slurry from the first polishing process through a second filter, the second filter being more restrictive than the first filter;
• and
• re-circulating the slurry from the second filter back to the second polishing process.

A system, comprising:

• a polishing tool for polishing wafers, the polishing tool being adapted to:
• receive at least one wafer having a process layer formed theron for polishing;
• polish the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size;
• and
• polish the process layer using a second polishing process that is associated with a slurry having a second polishing process, the second abrasive particle size being different from the first abrasive particle size;
• and
• a process controller coupled to the polishing tool, the process controller being adapted to communicate with at least one of a slurry controller and the polishing tool.

A computer readable program storage device encoded with instructions that, when executed by a computer, performs a method for controlling a polishing tool in a manufacturing process, comprising:

• providing at least one wafer having a process layer formed thereon for polishing;
• polishing the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size;
• and
• polishing the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size, the second abrasive particle size being different from the first abrasive particle size.

A system, comprising:

• means for receiving at least one wafer having a process layer formed thereon for polishing;
• means for polishing the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size;
• and
• means for polishing the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size, the second abrasive particle size being different from the first abrasive particle size.

A method, comprising:

• providing at least one wafer having a process layer formed thereon for polishing;
• polishing the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size;
• polishing the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size, the second abrasive particle size being less than the first abrasive particle size;
• processing the slurry from the first polishing process through a slurry re-circulation loop;
• replacing the slurry from the first polishing process with a second slurry that is associated with the second abrasive particle size;
• and
• circulating the second slurry to the second polishing process.

A method, comprising:

• providing at least one wafer having a process layer formed thereon for polishing;
• polishing the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size;
• polishing the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size, the second abrasive particle size being greater than the first abrasive particle size;
• filtering the slurry during the first polishing process through a first filter;
• replacing the filter from the first polishing process with a second filter, the second filter being less restrictive than the first filter;
• introducing new abrasive particles to the slurry from the first polishing process;
• and
• re-circulating the slurry from the second filter back to the second polishing process.

A method, comprising:

• providing at least one wafer having a process layer formed thereon for polishing;
• polishing the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size;
• polishing the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size, the second abrasive particle size being greater than the first abrasive particle size;
• processing the slurry from the first polishing process through a slurry re-circulation loop;
• replacing the slurry from the first polishing process with a second slurry that is associated with the second abrasive particle size;
• and
• circulating the second slurry to the second polishing process.

The method of claimed 48, further comprising:

• filtering the slurry during the first polishing process through a first filter;
• replacing the filter from the first polishing process with a second filter, the second filter being less restrictive than the first filter;
• introducing new abrasive particles to the slurry from the first polishing process;
• and
• re-circulating the slurry from the second filter back to the second polishing process.

A method, comprising:

• providing at least one wafer for polishing;
• polishing a processing surface of the at least one wafer using a first polishing process that is associated with a slurry having a first abrasive particle size;
• polishing the processing surface of the at least one wafer using a second polishing process that is associated with a slurry having a second abrasive particle size, the second abrasive particle size being greater than the first abrasive particle size;
• filtering the slurry during the first polishing process through a first filter;
• replacing the filter from the first polishing process with a second filter, the second filter being less restrictive than the first filter;
• introducing new abrasive particles to the slurry from the first polishing process;
• and
• re-circulating the slurry from the second filter back to the second polishing process.