Method of chemical vapor depositing tungsten films

A method for depositing tungsten on a semiconductor substrate comprising the steps of:

• receiving the semiconductor substrate at a first deposition station within a chemical vapor deposition chamber having a plurality of discrete deposition stations;
• heating the semiconductor substrate to a temperature between about 360 and about 390 degrees centigrade;
• introducing initiation gases for about 10 seconds into the first deposition station to form an amorphous, monolayer of silicon, wherein the initiation gases comprise a silane (SiH4) gas flow of about 40 to about 48 standard cubic centimeters per minute;
• introducing nucleation gases for about 10 seconds into the first deposition station to form a silane reduced tungsten layer of about 400 angstroms thickness, wherein the nucleation gases comprise a silane gas flow of about 20 to about 30 standard cubic centimeters per minute and a tungsten hexafluoride (WF6) gas flow of about 300 to about 350 standard cubic centimeters per minute;
• introducing a hydrogen reducing gas flow for about 20 seconds into the first deposition station to form a layer of hydrogen reduced bulk tungsten of about 370 angstroms, wherein the hydrogen reducing gas flow comprises a hydrogen gas flow of about 7,000 to about 8,500 standard cubic centimeters per minute and a tungsten hexafluoride gas flow of about 300 to about 350 standard cubic centimeters per minute;
• receiving the semiconductor substrate into successive deposition stations;
• and
• introducing at each successive deposition station a gas flow for about 30 seconds to deposit a bulk, hydrogen reduced tungsten, said gas flow comprising tungsten hexafluoride flow of about 300 to about 350 standard cubic centimeters per minute and hydrogen flow of about 7,000 to about 8,500 standard cubic centimeters per minute.

A method for depositing tungsten on a semiconductor substrate comprising the steps of:

• receiving the semiconductor substrate on a heated platen at a first deposition station within a chemical vapor deposition chamber having a plurality of discrete deposition stations, each deposition chamber having a heated platen that heats the semiconductor substrate to between about 360 and about 390 degrees centigrade;
• introducing initiation gases into the first deposition station to form an amorphous, monolayer of silicon, wherein the initiation gases comprise a silane (SiH4) gas flow of about 40 about 48 standard cubic centimeters per minute while also introducing a backside gas flow against the semiconductor substrate and heated platen for preventing backside deposition and front side edge deposit and maintaining the backside gas flow in subsequent processing;
• introducing nucleation gases into the first deposition station to form a silane reduced tungsten layer, wherein the nucleation gases comprise a silane gas flow of about 20 to about 30 standard cubic centimeters per minute and a tungsten hexafluoride (WF6) gas flow of about 300 to about 350 standard cubic centimeters per minute;
• introducing a hydrogen reducing gas flow to form a layer of hydrogen reduced bulk tungsten, wherein the hydrogen reducing gas flow comprises a hydrogen gas flow of about 7,000 to about 8,500 standard cubic centimeters per minute and a tungsten hexafluoride gas flow of about 300 to about 350 standard cubic centimeters per minute;
• and
• depositing at successive deposition stations a bulk, hydrogen reduced tungsten.