Process for forming fine wiring

A process for forming a fine wiring comprising:

• (a) depositing a barrier metal oxide film or barrier metal salt film,
• (b) reducing said barrier metal oxide film or barrier metal salt film to form a barrier metal film in a pattern formed on an interlayer insulating layer disposed on a substrate;
• wherein the barrier metal filmis to prevent ion migration and
• (c) applying a wiring layer to said pattern by an electrolytic plating method or electroless plating method.

A process for manufacturing a semiconductor device including a step for forming a fine wiring, wherein said process comprises the steps of:

• (a) forming a film of a metal oxide or metal salt, containing a first metal element;
• or containing a first metal element and one or more elements which are different from the first metal element, which becomes a barrier metal film or wiring layer as any one of layers which are provided on a substrate;
• and
• (b) converting said metal oxide film or metal salt film into a metal film by reducing it in a solution which contains hydrogen ions.

A process for manufacturing a semiconductor device including a step for forming a fine wiring, wherein said process comprises the steps of:

• (a) forming a film of a metal oxide or metal salt, containing a first metal element;
• or containing a first metal element and one or more elements which are different from the first metal element, which becomes a barrier metal film as any one of layers which are provided on the substrate;
• (b) converting said metal oxide film or metal salt film into a metal film by reducing it in a solution which contains hydrogen ions;
• and
• (c) heat treating said metal film under a reduced pressure or in inert atmosphere.

A process for manufacturing a semiconductor device including a step for forming a fine wiring, wherein said process comprises the steps of:

• (a) forming a film of a metal oxide or metal salt, containing a first metal element;
• or containing a first metal element and one or more elements which are different from the first metal element, which becomes a barrier metal film as any one of layers which are provided on a substrate;
• (b) converting said metal oxide film or metal salt film into a metal film by reducing it in a solution which contains hydrogen ions;
• and
• (c) forming a wiring layer on said metal film which becomes the barrier metal film by electrochemically precipitating ions of said metal in an electrolytic solution which contains ions of said metal which becomes a main material of the wiring layer.

A process for manufacturing a semiconductor device including a step for forming a fine wiring, wherein said process comprises the steps of:

• (a) forming a film of a metal oxide or metal salt, containing a first metal element;
• or containing a first metal element and one or more elements which are different from the main metal element, which becomes a barrier metal film as any one of layers which are provided on a substrate;
• (b) converting said metal oxide film or metal salt film into a barrier metal film by reducing it in a solution containing hydrogen ions;
• and
• (c) forming a wiring layer on said barrier metal film by electrochemically precipitating ions of a metal by an electroless process in a electrolytic solution which contains ions of this metal which becomes a main material of the wiring layer.