Method for manufacturing diffusion barrier layer
AssigneeVanguard International Semiconductor Corporation
InventorHorng-Huei Tseng
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Abstract
A method for manufacturing a diffusion barrier layer over a substrate having a patterned copper layer. A refractory metal layer or a nitride layer of refractor metal is formed on the substrate and a top surface and a sidewall of the patterned copper layer. The refractory metal layer or the nitride layer of refractor metal is converted by HDP treatment into an implanted layer as a diffusion barrier layer, where gas of N2, O2, NH3, NO2; or N2O are used for producing implanting ions. A thermal process is performed stabilize a diffusion barrier quality of the oxygen-containing implantation layer.
Claims14
A method for manufacturing a diffusion barrier layer over a substrate having a patterned copper layer, the method comprising the steps of:
- forming a refractory metal layer on the substrate and a top surface and a sidewall of the patterned copper layer;
- performing a high density plasma (HDP) treatment to convert the refractory metal layer into an implantation layer which serves as a diffusion barrier layer;
- and
- performing a thermal process to stabilize a diffusion barrier quality of the implantation layer.
A method for manufacturing a diffusion barrier layer over a substrate having a patterned copper layer, the method comprising the steps of:
- forming a nitride layer of refractory metal on the substrate and a top surface and a sidewall of the patterned copper layer;
- performing a plasma treatment to convert the nitride layer of refractory metal into an implantation layer which serves as a diffusion barrier layer;
- and
- performing a thermal process to stabilize a diffusion barrier, quality of the implantation layer.
Dependencies are inferred from the claim text.